N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

DESCRIPTION\nThe 2SK2857 is a switching device which can be driven directly by a 5V power source.\nThe 2SK2857 features a low on-state resistance and excellent Switching Characteristics, and is suitable for applications such as actuator driver.FEATURES\n• Can be driven by a 5V power source.\n• Low O • Can be driven by a 5V power source.\n• Low On-state resistance :\n   RDS(on)1 = 220 mΩ MAX. (VGS = 4 V, ID = 1.5 A)\n   RDS(on)2 = 150 mΩ MAX. (VGS = 10 V, ID = 2.5 A) ;

Chip Type 2C2857 Geometry 0011 Polarity NPN

Chip type 2C2857 by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for use in high-gain, low noise amplifier, oscillator, mixer and UHF converters. Features: ft = 1.2 GHz (typ) at 5 mA/6V

Chip Type 2C2857 Geometry 0011 Polarity NPN

Chip type 2C2857 by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for use in high-gain, low noise amplifier, oscillator, mixer and UHF converters. Features: ft = 1.2 GHz (typ) at 5 mA/6V

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