LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ

Description The PTF080101 is a 10 W, internally matched GOLDMOS FET intended for EDGE applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical EDGE performance - Average output power

High Power RF LDMOS Field Effect Transistor 10 W, 450 ??960 MHz

Description The PTF080101M is an unmatched 10-watt GOLDMOS® FETintended for class AB base station applications in the 450 MHz to 960 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small footprint. Features • Typical EDGE performance - Average out

Thermally-Enhanced High Power RF LDMOS FET 10 W, 860 - 960 MHz

Description The PTF080101 is a 10 W, internally matched GOLDMOS FET intended for EDGE applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical EDGE performance - Average output power

LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ

Description The PTF080101 is a 10 W, internally matched GOLDMOS FET intended for EDGE applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical EDGE performance - Average output power

All Dimension In Mm

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