POWERTRANSISTORS(25A,200W)

General-PurposePowerAmplifierandSwitchingApplications Features •LowCollector−EmitterSaturationVoltage− VCE(sat)=1.0V(Max)@IC=15A •ExcellentDCCurrentGain− hFE=20~100@IC=10A

COMPLEMENTARYSILICONHIGHPOWERTRANSISTORS

DESCRIPTION The2N5884and2N5886arecomplementarysiliconpowertransistorinJedecTO-3metalcaseintededforuseinpowerlinearamplifiersandswitchingapplications. ■SGS-THOMSONPREFERREDSALESTYPES ■COMPLEMENTARYPNP-NPNDEVICES ■HIGHCURRENTCAPABILITY APPLICATION

COMPLEMENTARYSILICONHIGH-POWERTRANSISTORS

General-PurposePowerAmplifierandSwitchingApplications Features •LowCollector−EmitterSaturationVoltage− VCE(sat)=1.0V(Max)@IC=15A •ExcellentDCCurrentGain− hFE=20~100@IC=10A

ComplementarySiliconHigh?뭁owerTransistors

Complementarysiliconhigh−powertransistorsaredesignedforgeneral−purposepoweramplifierandswitchingapplications. Features •LowCollector−EmitterSaturationVoltage− VCE(sat)=1.0Vdc,(max)atIC=15Adc •LowLeakageCurrent ICEX=1.0mAdc(max)atRatedVoltage •Excell

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3package •Complementtotype2N58852N5886 •Highpowerdissipations APPLICATIONS •Theyareintendedforuseinpowerlinear andswitchingapplications