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2N5884晶体管资料
2N5884别名：2N5884三极管、2N5884晶体管、2N5884晶体三极管
2N5884生产厂家：美国摩托罗拉半导体公司_ITX_美国晶体管有限公司
2N5884制作材料：Si-PNP
2N5884性质：低频或音频放大 （LF）_开关管 （S）_功率放大 （L
2N5884封装形式：直插封装
2N5884极限工作电压：80V
2N5884最大电流允许值：25A
2N5884最大工作频率：>4MHZ
2N5884引脚数：2
2N5884最大耗散功率：200W
2N5884放大倍数：
2N5884图片代号：E-44
2N5884vtest：80
2N5884htest：4000100
- 2N5884atest：25
2N5884wtest：200
2N5884代换 2N5884用什么型号代替：BD369,MJ4502,2N5684,2N6377,
2N5884价格
参考价格：￥38.2016
型号：2N5884 品牌：Central 备注：这里有2N5884多少钱，2025年最近7天走势，今日出价，今日竞价，2N5884批发/采购报价，2N5884行情走势销售排行榜，2N5884报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
2N5884 | POWERTRANSISTORS(25A,200W) General-PurposePowerAmplifierandSwitchingApplications Features •LowCollector−EmitterSaturationVoltage− VCE(sat)=1.0V(Max)@IC=15A •ExcellentDCCurrentGain− hFE=20~100@IC=10A | MOSPECMospec Semiconductor 统懋统懋半导体股份有限公司 |  |   |
2N5884 | COMPLEMENTARYSILICONHIGHPOWERTRANSISTORS DESCRIPTION The2N5884and2N5886arecomplementarysiliconpowertransistorinJedecTO-3metalcaseintededforuseinpowerlinearamplifiersandswitchingapplications. ■SGS-THOMSONPREFERREDSALESTYPES ■COMPLEMENTARYPNP-NPNDEVICES ■HIGHCURRENTCAPABILITY APPLICATION | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 |  | |
2N5884 | COMPLEMENTARYSILICONHIGH-POWERTRANSISTORS General-PurposePowerAmplifierandSwitchingApplications Features •LowCollector−EmitterSaturationVoltage− VCE(sat)=1.0V(Max)@IC=15A •ExcellentDCCurrentGain− hFE=20~100@IC=10A | bocaBoca Semiconductor Corporation 博卡博卡半导体公司 |  | |
2N5884 | ComplementarySiliconHigh?뭁owerTransistors Complementarysiliconhigh−powertransistorsaredesignedforgeneral−purposepoweramplifierandswitchingapplications. Features •LowCollector−EmitterSaturationVoltage− VCE(sat)=1.0Vdc,(max)atIC=15Adc •LowLeakageCurrent ICEX=1.0mAdc(max)atRatedVoltage •Excell | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | |
2N5884 | SiliconPNPPowerTransistors DESCRIPTION •WithTO-3package •Complementtotype2N58852N5886 •Highpowerdissipations APPLICATIONS •Theyareintendedforuseinpowerlinear andswitchingapplications | SAVANTIC Savantic, Inc. |  | |
2N5884 | SiliconPNPPowerTransistors DESCRIPTION •WithTO-3package •Complementtotype2N58852N5886 •Highpowerdissipations APPLICATIONS •Theyareintendedforuseinpowerlinear andswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
2N5884 | PowerTransistors PowerTransistors | ETCList of Unclassifed Manufacturers 未分类制造商 |  | |
2N5884 | SiliconPNPPowerTransistors DESCRIPTION •WithTO-3package •Complementtotype2N58852N5886 APPLICATIONS •Theyareintendedforuseinpowerlinear andswitchingapplications | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 |  | |
2N5884 | POWERTRANSISTORSCOMPLEMENTARYSILICON ...designedforgeneral−purposepoweramplifierandswitchingapplications. Features •LowCollector−EmitterSaturationVoltage− VCE(sat)=1.0Vdc,(max)atIC=15Adc •LowLeakageCurrent-ICEX=1.0mAdc(Max) •ExcellentDCCurrentGain−hFE=20(Min)@IC=10Adc | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 |  | |
2N5884 | iscSiliconPNPPowerTransistor DESCRIPTION •WithTO-3package •Complementtotype2N58852N5886 •Highpowerdissipations APPLICATIONS •Theyareintendedforuseinpowerlinear andswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | |
2N5884 | iscSiliconPNPPowerTransistor DESCRIPTION ·LowCollectorSaturationVoltage- :VCE(sat)=-1.0V(Max.)@IC=-15A ·DCCurrentGain- :hFE=20-100@IC=-10A ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedforgeneral-purposepoweramplifierandswitching applicati | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | |
2N5884 | 封装/外壳：TO-204AA，TO-3 包装：散装 描述：TRANS PNP 80V 25A TO204 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
2N5884 | 包装：散装 描述：PNP POWER TRANSISTOR SILICON AMP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司 |  | |
2N5884 | SiliconPNPPowerTransistors 文件：115.12 Kbytes Page：3 Pages | SAVANTIC Savantic, Inc. | | |
ComplementarySiliconHigh?뭁owerTransistors Complementarysiliconhigh−powertransistorsaredesignedforgeneral−purposepoweramplifierandswitchingapplications. Features •LowCollector−EmitterSaturationVoltage− VCE(sat)=1.0Vdc,(max)atIC=15Adc •LowLeakageCurrent ICEX=1.0mAdc(max)atRatedVoltage •Excell | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
2N5884产品属性
- 类型
描述
- 型号
2N5884
- 功能描述
两极晶体管 - BJT PNP Power SW
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
TO-204 |
977 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
Central Semiconductor Corp |
24+ |
TO-204AA,TO-3 |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
ON/安森美 |
24+ |
TO-3 |
990000 |
明嘉莱只做原装正品现货 |
|||
ON |
1738+ |
TO-3 |
8529 |
科恒伟业!只做原装正品,假一赔十! |
|||
ST/意法 |
20+ |
TO-3 |
14 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ON/安森美 |
18+ |
CAN |
12500 |
全新原装正品,本司专业配单,大单小单都配 |
|||
BOCA |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
|||
ON |
22+ |
TO-220-3 |
50000 |
ON二三极管全系列在售 |
|||
ST/意法 |
21+ |
TO-3 |
192 |
原装现货假一赔十 |
|||
ON/安森美 |
25+ |
TO-3 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
2N5884芯片相关品牌
2N5884规格书下载地址
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2N5884数据表相关新闻
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原装代理
2022-7-232N5245
2N5245，当天发货0755-82732291全新原装现货或门市自取.
2020-8-5
DdatasheetPDF页码索引
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