COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS

General-Purpose Power Amplifier and Switching Applications Features • Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 V (Max) @ IC = 15 A • Excellent DC Current Gain − hFE = 20 ~ 100 @ IC = 10 A

POWER TRANSISTORS(25A,200W)

General-Purpose Power Amplifier and Switching Applications Features • Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 V (Max) @ IC = 15 A • Excellent DC Current Gain − hFE = 20 ~ 100 @ IC = 10 A

Bipolar Transistor

Description: High Power TO-3, PNP Transistor Features: • Low Collector Emitter Saturation Voltage : Vce(sat)1V Ic = 15A • High Current Gain-Bandwidth Product : ft = 4MHz (Min.) @ Ic = 1A • Low Leakage Current Icex = 1MA (Max.) at Rated Voltage • Excellent DC Current Gain hfe = 20 (Min.) @

Power Transistors

Power Transistors

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • Complement to type 2N5885 2N5886 • High power dissipations APPLICATIONS • They are intended for use in power linear and switching applications

isc Silicon PNP Power Transistor

DESCRIPTION • With TO-3 package • Complement to type 2N5885 2N5886 • High power dissipations APPLICATIONS • They are intended for use in power linear and switching applications

isc Silicon PNP Power Transistor

DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max.)@ IC= -15A ·DC Current Gain- : hFE= 20-100 @IC= -10A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose power amplifier and switching applicati

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • Complement to type 2N5885 2N5886 APPLICATIONS • They are intended for use in power linear and switching applications

POWER TRANSISTORS COMPLEMENTARY SILICON

... designed for general−purpose power amplifier and switching applications. Features • Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc • Low Leakage Current - ICEX = 1.0 mAdc (Max) • Excellent DC Current Gain − hFE = 20 (Min) @ IC = 10 Adc

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • Complement to type 2N5885 2N5886 • High power dissipations APPLICATIONS • They are intended for use in power linear and switching applications

COMPLEMENTARY SILICON HIGH POWER TRANSISTORS

DESCRIPTION The 2N5884 and 2N5886 are complementary silicon power transistor in Jedec TO-3 metal case inteded for use in power linear amplifiers and switching applications. ■ SGS-THOMSON PREFERRED SALESTYPES ■ COMPLEMENTARY PNP - NPN DEVICES ■ HIGH CURRENT CAPABILITY APPLICATION

Complementary Silicon High?뭁ower Transistors

Complementary silicon high−power transistors are designed for general−purpose power amplifier and switching applications. Features • Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc • Low Leakage Current ICEX = 1.0 mAdc (max) at Rated Voltage • Excell

200W NPN Complementary BJT Transistor

This BJT is packaged in TO-3 package.\n\n Available as High Reliability device per MIL-PRF-19500 indicate –HR suffix after the part number. Contact for -HR flow. Add \"PBF\" suffix for Pb-free lead finish.

Trans GP BJT PNP 80V 25A 3-Pin(2+Tab) TO-3 Sleeve

封装/外壳：TO-204AA，TO-3 包装：散装 描述：TRANS PNP 80V 25A TO204 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

包装：散装 描述：PNP POWER TRANSISTOR SILICON AMP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch

Silicon PNP Power Transistors

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Complementary Silicon High?뭁ower Transistors

Complementary silicon high−power transistors are designed for general−purpose power amplifier and switching applications. Features • Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc • Low Leakage Current ICEX = 1.0 mAdc (max) at Rated Voltage • Excell