Complementary silicon high−power transistors are designed for general−purpose power amplifier and switching applications.

Features

• Low Collector−Emitter Saturation Voltage −

VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc

• Low Leakage Current

ICEX = 1.0 mAdc (max) at Rated Voltage

• Excellent DC Current Gain −

hFE = 20 (min) at IC = 10 Adc

• High Current Gain Bandwidth Product −

f = 4.0 MHz (min) at IC = 1.0 Adc

• Pb−Free Packages are Available*