N-CHANNEL MOSFET

APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge UPS FEATURES Low gate charge Low Crss (typical 23pF ) Fast switching 100 avalanche tested Improved dv/dt capability RoHS product

N-CHANNEL MOSFET

N-CHANNEL MOSFET

APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge UPS FEATURES Low gate charge Low Crss (typical 23pF ) Fast switching 100 avalanche tested Improved dv/dt capability RoHS product

N-CHANNEL MOSFET

APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge UPS FEATURES Low gate charge Low Crss (typical 23pF ) Fast switching 100 avalanche tested Improved dv/dt capability RoHS product

N-CHANNEL MOSFET

APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge UPS FEATURES Low gate charge Low Crss (typical 23pF ) Fast switching 100 avalanche tested Improved dv/dt capability RoHS product

N-CHANNEL MOSFET

APPLICATIONS 1. High efficiency switch mode power supplies 2. Electronic lamp ballasts based on half bridge 3. UPS FEATURES 1. Low gate charge 2. Low Crss (typical 21pF ) 3. Fast switching 4. 100 avalanche tested 5. Improved dv/dt capability 6. RoHS product

N-CHANNEL MOSFET

APPLICATIONS 1. High efficiency switch mode power supplies 2. Electronic lamp ballasts based on half bridge 3. UPS FEATURES 1. Low gate charge 2. Low Crss (typical 21pF ) 3. Fast switching 4. 100 avalanche tested 5. Improved dv/dt capability 6. RoHS product

N-CHANNEL MOSFET

APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge UPS FEATURES Low gate charge Low Crss (typical 23pF ) Fast switching 100 avalanche tested Improved dv/dt capability RoHS product

N-CHANNEL MOSFET

APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge UPS FEATURES Low gate charge Low Crss (typical 23pF ) Fast switching 100 avalanche tested Improved dv/dt capability RoHS product

场效应晶体管/MOSFET-600V-700V系列

N-CHANNEL MOSFET / TO-220MF Package

7.4 Amps, 600 Volts N-CHANNEL MOSFET

■ DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in swi

7 Amps竊?00Volts N-Channel MOSFET

■ Description The ET7N60 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. ■ Features ● RDS(ON) = 1.20Ω@VGS = 10 V ● Low gate cha

isc N-Channel Mosfet Transistor

• DESCRITION • Designed for high efficiency switch mode power supply. • FEATURES • Drain Current –ID= 7A@ TC=25℃ • Drain Source Voltage- : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max) • Avalanche Energy Specified • Fast Switching • Simple Drive Requirem

7A 600V N-channel Enhancement Mode Power MOSFET

文件：898.89 Kbytes Page：11 Pages