N-CHANNEL MOSFET

FEATURES Low gate charge Low Crss (typical 9pF ) Fast switching 100 avalanche tested Improved dv/dt capability RoHS product APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge UPS

场效应晶体管

Low gate chargeLow CrssFast switching100% avalanche testedImproved dv/dt capabilityRoHS product;

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

600V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energ

Short Circuit Rated IGBT

General Description Fairchilds RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters

Short Circuit Rated IGBT

文件：556.04 Kbytes Page：7 Pages

Short Circuit Rated IGBT

文件：615.22 Kbytes Page：8 Pages