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丝印代码:JCS4N60C;N-CHANNEL MOSFET

APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge UPS FEATURES Low gate charge Low Crss (typical 14pF ) Fast switching 100 avalanche tested Improved dv/dt capability RoHS product

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

丝印代码:JCS4N60C;N-CHANNEL MOSFET

文件:1.97826 Mbytes Page:16 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

JCS4N60C

N-CHANNEL MOSFET

APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge UPS FEATURES Low gate charge Low Crss (typical 14pF ) Fast switching 100 avalanche tested Improved dv/dt capability RoHS product

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

JCS4N60C

N-CHANNEL MOSFET

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

丝印代码:JCS4N60CB;N-CHANNEL MOSFET

APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge UPS FEATURES Low gate charge Low Crss (typical 14pF ) Fast switching 100 avalanche tested Improved dv/dt capability RoHS product

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

场效应晶体管/MOSFET-600V-700V系列

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications

ONSEMI

安森美半导体

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications

MOTOROLA

摩托罗拉

Insulated Gate Bipolar Transistor with Anti-Parallel Diode

Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–block

ONSEMI

安森美半导体

PowerMOS transistors Avalanche energy rated

文件:80.57 Kbytes Page:9 Pages

PHILIPS

飞利浦

PowerMOS transistors Avalanche energy rated

文件:80.57 Kbytes Page:9 Pages

PHILIPS

飞利浦

JCS4N60C产品属性

  • 类型

    描述

  • ID@100℃(A):

    2.5

  • PD(W):

    100

  • BVdss(V):

    600

  • Rds(on)(Ω):

    2.4

  • Package:

    TO-220C

更新时间:2026-7-24 12:36:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
JVC
23+
TQFP
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
JVC
24+
TQFP
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
JVC
25+
MQFP
1500
原装现货热卖中,提供一站式真芯服务
JVC
23+
MQFP
8000
只做原装现货
JVC
2447
QFP
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
COPAL
25+23+
New
34896
绝对原装正品现货,全新深圳原装进口现货
JVC
23+
TQFP
50000
全新原装正品现货,支持订货
YAMAHA
ROHS
13352
一级代理 原装正品假一罚十价格优势长期供货
JVC
25+
QFP
20000
本公司 只做全新原装正品
JVC
08+
TQFP14
2255
全新原装进口自己库存优势

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