TOSHIBAInsulatedGateBipolarTransistorSiliconNChannelIGBTCurrentResonanceInverterSwitchingApplication

CurrentResonanceInverterSwitchingApplication •Enhancementmodetype •Highspeed:tf=0.19µs(typ.)(IC=50A) •Lowsaturationvoltage:VCE(sat)=1.9V(typ.)(IC=50A) •FRDincludedbetweenemitterandcollector •FourthgenerationIGBT •TO-3P(N)(Toshibapackagename)

Field-EffectTransistorSiliconP-ChannelMOSType(U-MOS??

○PowerManagementSwitchApplications •1.5-Vdrive •LowON-resistance:RDS(ON)=242mΩ(max)(@VGS=-1.5V) RDS(ON)=170mΩ(max)(@VGS=-1.8V) RDS(ON)=125mΩ(max)(@VGS=-2.5V)

SWITCHINGP-CHANNELPOWERMOSFETINDUSTRIALUSE

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TOSHIBAField-EffectTransistorSiliconP-ChannelMOSType(U-MOSVI)

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SocketterminalstripScrewconnection,withraisedbase

Thesocketterminalstrip327-FUwithraisedbaseandapitchof14,5mmis availablein1to12poledesign. Theraisedbaseextendsthecreepagedistancetothegroundwhichallows600V inaccordancewithULandCSAregulationswithoutanadditionalinsulatingbase. Onefixingholeislocat

JumperAccessories

Thejumper327-Jelectricallybridgesadjacentpolesofseries326and327 terminals. Itisavailablein14mmpitchwith2to12poles. Justlikethelead,itisconnectedtotheclampingunits. Thejumpershellisinsulated.

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ327isP-channelMOSFieldEffectTransistordesignedfor solenoid,motorandlampdriver. FEATURES •LowOn-stateResistance RDS(on)=0.13ΩTYP.(VGS=−10V,ID=−2.0A) RDS(on)=0.21ΩTYP.(VGS=−4V,ID=−1.6A) •LowCis

SocketterminalstripScrewconnection

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CrystalClockOscillators

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