P-Channel Switch

This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 88.

P-channel silicon field-effect transistors

DESCRIPTION Silicon symmetrical p-channel junction FETs in a plastic TO-92 envelope and intended for application with analog switches, choppers, commutators etc. A special feature is the interchangeability of the drain and source connections.

P-CHANNEL JFET

GENERAL INFORMATION/CROSS REFERENCES

P-Channel JFET Switch

FEATURES • Low Insertion Loss • No Offset or Error Generated By Closed Switch - Purely Resistive - High Isolation Resistance From Driver • Short Sample and Hold Aperture Time • Fast Switching APPLICATIONS • Analog Switches • Choppers • Commutators

P-Channel Silicon Junction Field-Effect Transistor

● Choppers ● Commutators ● Analog Switches

SINGLE P-CHANNEL JFET SWITCH

FEATURES • Direct Replacement For SILICONIX J/SST174 SERIES • LOW ON RESISTANCE rDS(on) ≤ 85Ω • LOW GATE OPERATING CURRENT ID(off) = 10pA

Linear Systems replaces discontinued Siliconix J177

This p-channel analog switch is designed to provide low on-resistance and fast switching. When used in combination with the complimentary J/SST111 n-channel family, the J177 simplifies series-shunt switching applications. FEATURES DIRECT REPLACEMENT FOR SILICONIX J177 LOW ON RESISTANCE

P-channel silicon field-effect transistors

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封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：散装 描述：JFET P-CH 30V 0.35W TO92 分立半导体产品 晶体管 - JFET

P-Channel JFETs

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P-Channel JFETs

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P-Channel Switch

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P-channel FET

封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：散装 描述：JFET P-CH 30V 0.35W TO92 分立半导体产品 晶体管 - JFET

a single P-Channel JFET switch

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PNP general purpose transistor

DESCRIPTION PNP transistor in a TO-18; SOT18 metal package. NPN complement: BC107. FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification.

HF/VHF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for industrial and military applications in the HF/VHF frequency range. FEATURES • High power gain • Low intermodulation distortion • Easy power control • Good thermal stability • Withstands full load mismatch

N-CHANNEL BROADBAND RF POWER MOSFET

Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as a driver or output amplifier in push–pull configurations. Can be used in manual gain control, ALC and modulation circuits. • Typical Performance at 400 MHz, 28 V: Output Power — 100 W

General Purpose Silicon Rectifier

Description: The NTE177 is a general purpose silicon rectifier in a DO35 case designed for switching applications.

Silicon epitaxial planar type

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