XPTTM 650V GenX4TM

Features • Silicon Chip on Direct-Copper Bond (DCB) Substrate • Isolated Mounting Surface • 2500V~ Electrical Isolation • Optimized for 10-30kHz Switching • Square RBSOA • Short Circuit Capability • Anti-Parallel Sonic Diode • High Current Handling Capability Applications • Power Inverte

封装/外壳：TO-247-3 包装：管件 描述：IGBT 650V 150A 455W ISOPLUS247 分立半导体产品 晶体管 - UGBT、MOSFET - 单

XPTTM 650V GenX4TM

Extreme Light Punch Through IGBT for 10-30kHz Switching Features ● Optimized for 10-30kHz Switching ● Square RBSOA ● Short Circuit Capability ● Anti-Parallel Sonic Diode ● High Current Handling Capability ● International Standard Packages Advantages ● High Power Density ● Low Gate Drive

XPTTM 650V GenX4TM

XPT™ 650V GenX4™ w/ Sonic Diode Extreme Light Punch Through IGBT for 10-30kHz Switching Features • International Standard Package • miniBLOC, with Aluminium Nitride Isolation • 2500V~ Isolation Voltage • Anti-Parallel Sonic Diode • Optimized for 10-30kHz Switching • Square RBSOA • Short C

IGBT

DESCRIPTION ·Low Saturation Voltage:VCE(sat)=2.1V@IC=110A ·Fast Switching ·High Ruggedness ·Enhanced Avalanche Capability APPLICATIONS ·Converter with high switching frequency ·Welding Converters ·UPS,PFC

XPTTM 650V GenX4TM

Extreme Light Punch Through IGBT for 10-30kHz Switching Features ● Optimized for 10-30kHz Switching ● Square RBSOA ● Short Circuit Capability ● Anti-Parallel Sonic Diode ● High Current Handling Capability ● International Standard Packages Advantages ● High Power Density ● Low Gate Drive