N-Channel Enhancement Mode Avalanche Rated

TrenchMV™ Power MOSFET N-Channel Enhancement Mode Avalanche Rated Features • Ultra-low On Resistance • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • 175 °C Operating Temperature Advantages • Easy to mount • Space savings • High p

isc N-Channel MOSFET Transistor

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N-Channel: Trench-Gate Power MOSFETs with HiPerFET™ Options

N-Channel Enhancement Mode Avalanche Rated

TrenchMV™ Power MOSFET N-Channel Enhancement Mode Avalanche Rated Features • Ultra-low On Resistance • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • 175 °C Operating Temperature Advantages • Easy to mount • Space savings • High p

isc N-Channel MOSFET Transistor

• FEATURES • Static drain-source on-resistance: RDS(on) ≤ 23mΩ@VGS=10V • Fully characterized avalanche voltage and current • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATION • DC/DC Converters • High Current Swit