isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -10A@ TC=25℃ · Drain Source Voltage -VDSS= -150V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.35Ω(Max)@VGS= -10V DESCRIPTION · DC Choppers · Current Regulators · Battery Charger Applications

P通道MOSFET

• 快速本征二极管\n• 较低的Qg和RDSon\n• 雪崩评级\n• 加大的FBSOA\n• 国际标准包装;

P-Channel Enhancement Mode Avalanche Rated

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Polyester Film Capacitors Metallized Radial Leads

Metallized Radial Leads DC Applications Miniature Size Type DME radial-leaded, mini-dipped capacitors deliver virtually the same performance of other capacitors physically twice as big. Improvements in flm technology permit the use of thinner dielectric. Type DME self heals shorts caused by over

P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS

P-Channel Enhancement - Mode Power Field-Effect Transistors Features: ■ SOA is power-dissipation limited ■ Nanoseconde switching speeds ■ Linear transfer characteristics ■ High input impedance ■ Majority carrier device

P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS

P-Channel Enhancement - Mode Power Field-Effect Transistors Features: ■ SOA is power-dissipation limited ■ Nanoseconde switching speeds ■ Linear transfer characteristics ■ High input impedance ■ Majority carrier device

-10A, -150V, 0.500 Ohm, P-Channel Power MOSFET

This P-Channel enhancement mode silicon gate power field effect transistor is designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These ty

Axial Leaded High Frequency Pulse Capacitors

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