Linear L2 Power MOSFET w/ Extended FBSOA

N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated Features ● Designed for Linear Operation ● Avalanche Rated ● Guaranteed FBSOA at 75°C Advantages ● Easy to Mount ● Space Savings ● High Power Density Applications ● Solid State Circuit Breakers ● Soft Start Controls ● Linear A

isc N-Channel MOSFET Transistor

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N通道线性MOSFET

N-Channel Enhancement Mode Power MOSFET

Description The G200N10K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 9mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Power MOSFET

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Polar HiPerFET Power MOSFET

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Polar HiPerFET Power MOSFET

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