位置：首页 > IC中文资料第5995页 > IXTU01N80
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IXTU01N80 | HighVoltageMOSFET HighVoltageMOSFET N-Channel,EnhancementMode Features •InternationalstandardpackagesJEDECTO-251AA,TO-252AA •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Fastswitchingtimes Applications •Levelshifting •Triggers •Solidstaterelays •Currentre | IXYS IXYS Corporation |  |   |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=0.1A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=50Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
Plastic-EncapsulateMOSFETS 文件：710.08 Kbytes Page：3 Pages | ZPSEMIZP Semiconductor 至尚臻品 |  | | |
N-ChannelPowerMOSFET 文件：796.82 Kbytes Page：5 Pages | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 |  | | |
Plastic-EncapsulateMOSFETS 文件：546.31 Kbytes Page：2 Pages | ZPSEMIZP Semiconductor 至尚臻品 | | |
IXTU01N80产品属性
- 类型
描述
- 型号
IXTU01N80
- 功能描述
MOSFET 0.1 Amps 800V 50 Rds
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS/艾赛斯 |
2022+ |
TO-251 |
30000 |
进口原装现货供应,原装 假一罚十 |
|||
IXYS |
22+ |
TO2513 Short Leads IPak TO251A |
9000 |
原厂渠道,现货配单 |
|||
IXYS |
18+ |
TO-251 |
85600 |
保证进口原装可开17%增值税发票 |
|||
IXYS/艾赛斯 |
2447 |
TO-251 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
IXYS |
1822+ |
TO-251 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
I |
25+ |
TO-251AA |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
IXYS/艾赛斯 |
23+ |
TO-251 |
50000 |
全新原装正品现货,支持订货 |
|||
24+ |
N/A |
76000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
TOSHIBA/东芝 |
23+ |
SOP-5 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
IXYS/艾赛斯 |
21+ |
TO-251 |
10000 |
原装现货假一罚十 |
IXTU01N80芯片相关品牌
IXTU01N80规格书下载地址
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DdatasheetPDF页码索引
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