位置：首页 > IC中文资料第5995页 > IXTU01N80
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IXTU01N80 | High Voltage MOSFET High Voltage MOSFET N-Channel, Enhancement Mode Features • International standard packages JEDEC TO-251 AA, TO-252 AA • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Fast switching times Applications • Level shifting • Triggers • Solid state relays • Current re | IXYS 艾赛斯 |   | |
IXTU01N80 | N-Channel: Standard Power MOSFETs | Littelfuse 力特 | | |
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=0.1A@ TC=25℃ ·Drain Source Voltage -VDSS=800V(Min) ·Static Drain-Source On-Resistance -RDS(on) =50Ω(Max)@VGS = 10 V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
Plastic-Encapsulate MOSFETS 文件：710.08 Kbytes Page：3 Pages | ZPSEMIZP Semiconductor 至尚臻品 | | ||
N-Channel Power MOSFET 文件：796.82 Kbytes Page：5 Pages | JIANGSU 长电科技 | | ||
Plastic-Encapsulate MOSFETS 文件：546.31 Kbytes Page：2 Pages | ZPSEMIZP Semiconductor 至尚臻品 | |
IXTU01N80产品属性
- 类型
描述
- 型号
IXTU01N80
- 功能描述
MOSFET 0.1 Amps 800V 50 Rds
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS |
18+ |
TO-251 |
85600 |
保证进口原装可开17%增值税发票 |
|||
IXYS/艾赛斯 |
2447 |
TO-251 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
IXYS/艾赛斯 |
07+ |
TO-251 |
9668 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IXYS/艾赛斯 |
23+ |
TO-251 |
50000 |
全新原装正品现货,支持订货 |
|||
IXYS/艾赛斯 |
23+ |
TO-251 |
9668 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
24+ |
N/A |
76000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
IXYS |
22+ |
TO2513 Short Leads IPak TO251A |
9000 |
原厂渠道,现货配单 |
|||
IXYS |
2016+ |
TO-251 |
30170 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
IXYS/艾赛斯 |
23+ |
TO-251 |
65000 |
原装正品 华强现货 |
|||
IXYS/艾赛斯 |
24+ |
NA/ |
30170 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
IXTU01N80规格书下载地址
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DdatasheetPDF页码索引
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