位置：首页 > IC中文资料第6720页 > IXTT72N20
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HiPerFET Power MOSFETs HiPerFET Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • International standard packages • Molding epoxies meet UL94V-0 flammability classification • Low RDS (on) HDMOSTM process • Unclamped Inductive Switching (UIS) rated • Fast intrinsic rectifier | IXYS 艾赛斯 |   | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 72A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 35mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications | ISC 无锡固电 | | ||
N-Channel Enhancement Mode 文件：117.64 Kbytes Page：2 Pages | IXYS 艾赛斯 | | ||
isc N-Channel MOSFET Transistor 文件：381.07 Kbytes Page：2 Pages | ISC 无锡固电 | |
IXTT72N20产品属性
- 类型
描述
- 型号
IXTT72N20
- 功能描述
MOSFET 72 Amps 200 V 0.033 W Rds
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
LEVELON |
24+ |
BGA |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
LEVELONE |
23+ |
BGA |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
LEV |
24+/25+ |
20 |
原装正品现货库存价优 |
||||
IXF1002EC |
25+ |
78 |
78 |
||||
INTEL |
25+ |
BGAQFP |
8659 |
原装公司现货!原装正品价格优势. |
|||
INFINERA |
2450+ |
BGA |
9485 |
只做原装正品现货或订货假一赔十! |
|||
INTEL |
24+ |
BGA |
30000 |
一级代理原装现货假一罚十 |
|||
LEVELON |
22+ |
BGA |
20000 |
公司只做原装 品质保障 |
|||
Rochester Electronics(罗彻斯特 |
25+ |
原厂封装 |
20000 |
原装 |
|||
IXYS |
22+ |
TO2643 TO264AA |
9000 |
原厂渠道,现货配单 |
IXTT72N20规格书下载地址
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DdatasheetPDF页码索引
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