位置：首页 > IC中文资料第3312页 > IXTT170N10P
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IXTT170N10P | N-Channel Enhancement Mode Avalanche Rated 文件：170.28 Kbytes Page：5 Pages | IXYS 艾赛斯 |   | |
IXTT170N10P | PolarTM Power MOSFET 文件：170.28 Kbytes Page：5 Pages | IXYS 艾赛斯 | | |
IXTT170N10P | N通道标准 Polar™ MOSFET | Littelfuse 力特 | | |
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. | CET-MOS 华瑞 | | ||
100V N-Channel Power Mosfet 文件：3.11699 Mbytes Page：4 Pages | FOSTER 福斯特半导体 | | ||
N-Channel Power MOSFET 文件：2.24483 Mbytes Page：4 Pages | FOSTER 福斯特半导体 | |
IXTT170N10P产品属性
- 类型
描述
- 型号
IXTT170N10P
- 功能描述
MOSFET 170 Amps 100V 0.009 Ohm Rds
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Littelfuse/IXYS |
24+ |
TO-268 |
8075 |
支持大陆交货,美金交易。原装现货库存。 |
|||
IXYS |
23+ |
N/A |
10065 |
原装正品,有挂有货,假一赔十 |
|||
IXYS |
24+ |
TO-268 |
8866 |
||||
IXYS(艾赛斯) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
IXS |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
IXYS |
21+ |
N/A |
254 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IXYS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
xilinx |
25+ |
TO-268 |
6000 |
全新现货 |
|||
- |
23+ |
NA |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
24+ |
N/A |
69000 |
一级代理-主营优势-实惠价格-不悔选择 |
IXTT170N10P规格书下载地址
IXTT170N10P参数引脚图相关
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IXTT170N10P数据表相关新闻
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DdatasheetPDF页码索引
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