位置：首页 > IC中文资料第10525页 > IXTR62N15P
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IXTR62N15P | N-Channel Enhancement Mode 文件：212.94 Kbytes Page：2 Pages | IXYS 艾赛斯 |   | |
IXTR62N15P | N-Channel: Standard Power MOSFETs | Littelfuse 力特 | | |
PolarHT Power MOSFET N-Channel Enhancement Mode Avalanche Rated Features • International standard packages • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savings • High power density | IXYS 艾赛斯 | | ||
PolarHT Power MOSFET N-Channel Enhancement Mode Avalanche Rated Features • International standard packages • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savings • High power density | IXYS 艾赛斯 | | ||
isc N-Channel MOSFET Transistor 文件：294.89 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-Channel Enhancement Mode 文件：212.94 Kbytes Page：2 Pages | IXYS 艾赛斯 | | ||
isc N-Channel MOSFET Transistor 文件：295.89 Kbytes Page：2 Pages | ISC 无锡固电 | |
IXTR62N15P产品属性
- 类型
描述
- 型号
IXTR62N15P
- 功能描述
MOSFET 62 Amps 150V 0.045 Rds
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
xilinx |
22+ |
TO-247 |
6800 |
||||
IXYS |
22+ |
ISOPLUS247? |
9000 |
原厂渠道,现货配单 |
|||
IXYS/艾赛斯 |
23+ |
ISOPLUS247 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
IXYS |
24+ |
ISOPLUS247trade |
60 |
||||
IXYS(艾赛斯) |
23+ |
N/A |
7500 |
IXYS(艾赛斯)全系列在售 |
|||
IXYS |
25+ |
ISOPLUS24 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
xilinx |
25+ |
TO-247 |
6000 |
全新现货 |
|||
IXYS/LITTELFUSE |
1917 |
TO-247 |
15800 |
全新原装正品现货直销 |
|||
IXYS |
25+ |
TO-247 |
326 |
就找我吧!--邀您体验愉快问购元件! |
IXTR62N15P芯片相关品牌
IXTR62N15P规格书下载地址
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2018-12-28
DdatasheetPDF页码索引
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