位置：首页 > IC中文资料第10525页 > IXTR210P10T
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IXTR210P10T | P-Channel Enhancement Mode 文件：204.04 Kbytes Page：6 Pages | IXYS |   | |
Trenched P-Channel MOSFET FEATURES · Drain Current -ID= -210A@ TC=25℃ · Drain Source Voltage -VDSS= -100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 7.5mΩ(Max)@VGS= -10V APPLICATIONS · Switch Mode Power Supply (SMPS) · Uninterruptible Power Supply (UPS) · Power Factor Correction (PFC) | ISC 无锡固电 | | ||
P-Channel MOSFET Transistor FEATURES · Drain Current -ID= -210A@ TC=25℃ · Drain Source Voltage -VDSS= -100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 7.5mΩ(Max)@VGS= -10V · Fast-recovery body diode APPLICATIONS · DC Choppers · Automatic Test Equipment · Battery Charger Applications | ISC 无锡固电 | | ||
Standard Size Toggle Switch 文件：2.77001 Mbytes Page：14 Pages | COPAL 尼得科科智博电子 | | ||
P-Channel Enhancement Mode 文件：185.56 Kbytes Page：6 Pages | IXYS | | ||
P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier miniBLOC 文件：226.41 Kbytes Page：7 Pages | Littelfuse 力特 | |
IXTR210P10T产品属性
- 类型
描述
- 型号
IXTR210P10T
- 功能描述
MOSFET TrenchP Channel Power MOSFETs
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
xilinx |
22+ |
ISOPLUS247 |
6800 |
||||
IXYS(艾赛斯) |
23+ |
N/A |
7500 |
IXYS(艾赛斯)全系列在售 |
|||
IXYS/艾赛斯 |
22+ |
ISOPLUS247 |
25000 |
只做原装进口现货,专注配单 |
|||
IXYS |
22+ |
TO2473 |
9000 |
原厂渠道,现货配单 |
|||
IXYS |
24+ |
ISOPLUS247trade |
59 |
||||
IXYS/LITTELFUSE |
1915 |
TO-247 |
15800 |
全新原装正品现货直销 |
|||
24+ |
N/A |
51000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
IXYS |
25+ |
ISOPLUS247 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
xilinx |
23+ |
ISOPLUS247 |
8000 |
全新原装 |
|||
IXYS |
23+ |
TO2473 |
9000 |
原装正品，支持实单 |
IXTR210P10T规格书下载地址
IXTR210P10T参数引脚图相关
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2018-12-28
DdatasheetPDF页码索引
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