位置：首页 > IC中文资料第767页 > IXTQ56N15T
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IXTQ56N15T | 封装/外壳：TO-3P-3，SC-65-3 包装：管件 描述：MOSFET N-CH 150V 56A TO3P 分立半导体产品 晶体管 - FET，MOSFET - 单个 | IXYS 艾赛斯 |   | |
IXTQ56N15T | MOSFET N-CH 150V 56A TO-3P | Littelfuse 力特 | | |
N-Channel Enhancement Mode Avalanche Rated VDSS = 150 V ID25 = 56 A RDS(on) ≤ 36 mΩ N-Channel Enhancement Mode Avalanche Rated Features Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages Easy to mount Space savings | IXYS 艾赛斯 | | ||
N-Channel Enhancement Mode Avalanche Rated VDSS = 150 V ID25 = 56 A RDS(on) ≤ 36 mΩ N-Channel Enhancement Mode Avalanche Rated Features Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages Easy to mount Space savings | IXYS 艾赛斯 | | ||
isc N-Channel MOSFET Transistor 文件：299.02 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor 文件：294.86 Kbytes Page：2 Pages | ISC 无锡固电 | |
IXTQ56N15T产品属性
- 类型
描述
- 型号
IXTQ56N15T
- 功能描述
MOSFET 56 Amps 150V 36 Rds
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS/艾赛斯 |
21+ |
TO-3P |
10000 |
原装现货假一罚十 |
|||
IXYS/艾赛斯 |
23+ |
TO-3P |
32189 |
原装正品 华强现货 |
|||
IXYS |
21+ |
TO-247 |
1638 |
只做原装正品,不止网上数量,欢迎电话微信查询! |
|||
IXYS/艾赛斯 |
10+ |
TO-247 |
28316 |
进口原管盒箱现货 |
|||
IXYS |
23+ |
TO-3P |
8560 |
受权代理!全新原装现货特价热卖! |
|||
IXYS |
10+ |
TO-247 |
287 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IXYS |
20+ |
TO-3P |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
IXYS |
25+ |
TO-3P |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
IXYS/艾赛斯 |
25+ |
TO-247 |
30000 |
全新原装现货,价格优势 |
|||
IXYS |
25+23+ |
TO-247 |
27331 |
绝对原装正品全新进口深圳现货 |
IXTQ56N15T规格书下载地址
IXTQ56N15T参数引脚图相关
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2018-12-28
DdatasheetPDF页码索引
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