位置：首页 > IC中文资料第1021页 > IXTQ50N25T
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IXTQ50N25T | Trench Gate Power MOSFET N-Channel Enhancement Mode Trench Gate Power MOSFET N-Channel Enhancement Mode Features Avalanche Rated High Current Handling Capability Fast Intrinsic Rectifier Low RDS(on) Advantages High Power Density Easy to Mount Space Savings Applications DC-DC Coverters Battery Chargers | IXYS 艾赛斯 |   | |
IXTQ50N25T | N通道沟槽栅 Gen1 MOSFET | LITTELFUSE 力特 | | |
250V SGT N-Channel MOSFET Features: • Fast switching speed • 100% avalanche tested • Improved dv/dt capability • Enhanced Avalanche Ruggedness • Lead Free Applications: • Synchronous Rectification in SMPS • Hard Switching and High Speed Circuit • Power Tools • UPS • Motor Control | HUIXIN 慧芯电子 | | ||
HIPERFET Power MOSFTETs HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications. | IXYS 艾赛斯 | | ||
Trench Gate Power MOSFET N-Channel Enhancement Mode Trench Gate Power MOSFET N-Channel Enhancement Mode Features Avalanche Rated High Current Handling Capability Fast Intrinsic Rectifier Low RDS(on) Advantages High Power Density Easy to Mount Space Savings Applications DC-DC Coverters Battery Chargers | IXYS 艾赛斯 | | ||
Trench Gate Power MOSFET N-Channel Enhancement Mode Trench Gate Power MOSFET N-Channel Enhancement Mode Features Avalanche Rated High Current Handling Capability Fast Intrinsic Rectifier Low RDS(on) Advantages High Power Density Easy to Mount Space Savings Applications DC-DC Coverters Battery Chargers | IXYS 艾赛斯 | | ||
Trench Gate Power MOSFET N-Channel Enhancement Mode Trench Gate Power MOSFET N-Channel Enhancement Mode Features Avalanche Rated High Current Handling Capability Fast Intrinsic Rectifier Low RDS(on) Advantages High Power Density Easy to Mount Space Savings Applications DC-DC Coverters Battery Chargers | IXYS 艾赛斯 | |
IXTQ50N25T产品属性
- 类型
描述
- 型号
IXTQ50N25T
- 功能描述
MOSFET 50Amps 250V
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
N/A |
52000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
IXYS |
25+23+ |
TO-3P |
35116 |
绝对原装正品全新进口深圳现货 |
|||
IXYS |
25+ |
TO-3P |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
IXYS |
21+ |
TO-3P |
2700 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IXYS/艾赛斯 |
23+ |
TO3P |
50000 |
全新原装正品现货,支持订货 |
|||
IXYS/艾赛斯 |
24+ |
TO-3P |
4000 |
只做原装，欢迎询价，量大价优 |
|||
IXYS |
22+ |
TO-3P |
20000 |
公司只做原装 品质保障 |
|||
IXYS |
22+ |
TO3P3 SC653 |
9000 |
原厂渠道,现货配单 |
|||
IXYS |
24+ |
TO-3P |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
IXYS/艾赛斯 |
24+ |
TO-3P |
13550 |
只做原装假一罚十 |
IXTQ50N25T芯片相关品牌
IXTQ50N25T规格书下载地址
IXTQ50N25T参数引脚图相关
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IXTQ50N25T数据表相关新闻
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2018-12-28
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