PolarHVPowerMOSFET

N-ChannelEnhancementModeAvalancheRated Features Internationalstandardpackages UnclampedInductiveSwitching(UIS)rated Lowpackageinductance -easytodriveandtoprotect

N-ChannelEnhancementModePowerMOSFET

文件：127.15 Kbytes Page：6 Pages

iscN-ChannelMOSFETTransistor

文件：301.15 Kbytes Page：2 Pages

N-ChannelEnhancementModePowerMOSFET

文件：127.15 Kbytes Page：6 Pages

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=44A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.12Ω(Max)@VGS=10V ·100avalanchetested DESCRIPTION motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

44A,500V,0.12Ohm,N-ChannelSMPSPowerMOSFET

Features •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,AvalancheandHighReapplieddv/dtRuggedness •ReducedrDS(ON) •ReducedMillerCapacitanceandLowInputCapacitance •ImprovedSwitchingSpeedwithLowEMI •175°CRatedJunctionTemperature

HiPerFETPowerMOSFETsQ-Class

HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features •ConformstoSOT-227Boutline •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance •Fastintrins

PolarHVHiPerFETPowerMOSFET

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode VDSS=500V ID25=44A RDS(on)≤140mΩ trr≤200ns Features Internationalstandardpackages UnclampedInductiveSwitching(UIS)rated Lowpackageinductance -easytodriveandtoprotect

iscN-ChannelMOSFETTransistor

文件：275.98 Kbytes Page：2 Pages