位置：首页 > IC中文资料第3024页 > IXTQ170N10P
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IXTQ170N10P | N-Channel Enhancement Mode Avalanche Rated 文件：170.28 Kbytes Page：5 Pages | IXYS 艾赛斯 |   | |
IXTQ170N10P | N通道标准MOSFET | Littelfuse 力特 | | |
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. | CET-MOS 华瑞 | | ||
100V N-Channel Power Mosfet 文件：3.11699 Mbytes Page：4 Pages | FOSTER 福斯特半导体 | | ||
N-Channel Power MOSFET 文件：2.24483 Mbytes Page：4 Pages | FOSTER 福斯特半导体 | |
IXTQ170N10P产品属性
- 类型
描述
- 型号
IXTQ170N10P
- 功能描述
MOSFET 170 Amps 100V 0.009 Ohm Rds
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS/艾赛斯 |
24+ |
TO-3P |
5000 |
只做原装，欢迎询价，量大价优 |
|||
LITTELFUSE FAR EAST PTE LTD. |
25+ |
SMD |
918000 |
明嘉莱只做原装正品现货 |
|||
IXYS |
2450+ |
TO-3P |
6540 |
只做原厂原装正品终端客户免费申请样品 |
|||
Littelfuse/IXYS |
24+ |
TO3P |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
IXYS |
23+ |
TO-3P |
8560 |
受权代理!全新原装现货特价热卖! |
|||
IXYS/艾赛斯 |
24+ |
NA/ |
8995 |
原装现货,当天可交货,原型号开票 |
|||
IXYS |
24+ |
TO-3P |
8866 |
||||
IXYS |
20+ |
TO-3P |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
IXYS |
2447 |
TO-3P |
105000 |
30个/管一级代理专营品牌!原装正品,优势现货,长期 |
|||
IXYS |
23+ |
TO-3P |
7000 |
IXTQ170N10P芯片相关品牌
IXTQ170N10P规格书下载地址
IXTQ170N10P参数引脚图相关
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IXTQ170N10P数据表相关新闻
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2018-12-28
DdatasheetPDF页码索引
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