N-Channel Enhancement Mode

Polar™ Power MOSFET N-Channel Enhancement Mode Avalanche Rated Features • International Standard Packages • Low QG • Avalanche Rated • Low Package Inductance • Fast Intrinsic Rectifier Advantages • High Power Density • Easy to Mount • Space Savings Applications • DC-DC Converters •

N-Channel Enhancement Mode Power MOSFET

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N通道标准 Polar™ MOSFET

GOLD BONDED DIODES

[VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time

Trench Field-Stop Technology IGBT

DESCRIPTION · Fast switching · Low Switching Losses APPLICATIONS · AC and DC motor controls · Power · Lighting

5.3A, 1200V, NPT Series N-Channel IGBT

The HGTD1N120BNS and HGTP1N120BN are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduct

5.3A, 1200V, NPT Series N-Channel IGBT

The HGTD1N120BNS and HGTP1N120BN are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduct

5.3A, 1200V, NPT Series N-Channel IGBT

The HGTD1N120BNS and HGTP1N120BN are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduct