位置：首页 > IC中文资料第2353页 > IXTP15P15T
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IXTP15P15T | P-Channel Enhancement Mode Avalanche Rated 文件：284.74 Kbytes Page：6 Pages | IXYS |   | |
P-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | ||
P-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | ||
N-CHANNEL ENHANCEMENT MODE POWER MOSFET 文件：100.21 Kbytes Page：4 Pages | A-POWER 富鼎先进电子 | | ||
N-CHANNEL ENHANCEMENT MODE POWER MOSFET 文件：101.76 Kbytes Page：4 Pages | A-POWER 富鼎先进电子 | | ||
N-CHANNEL ENHANCEMENT MODE POWER MOSFET 文件：105.37 Kbytes Page：4 Pages | A-POWER 富鼎先进电子 | |
IXTP15P15T产品属性
- 类型
描述
- 型号
IXTP15P15T
- 功能描述
MOSFET TenchP Power MOSFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS/艾赛斯 |
24+ |
NA/ |
26050 |
原装现货,当天可交货,原型号开票 |
|||
IXYS |
20+ |
TO-220 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
IXYS(艾赛斯) |
23+ |
N/A |
7500 |
IXYS(艾赛斯)全系列在售 |
|||
IXYS/艾赛斯 |
2022+ |
TO-220 |
30000 |
进口原装现货供应,原装 假一罚十 |
|||
IXYS |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
|||
IXYS |
24+ |
TO-220-3 |
8866 |
||||
IXYS |
23+ |
TO-220 |
8000 |
只做原装现货 |
|||
IXYS |
23+ |
TO-220 |
7000 |
||||
IXYS |
23+ |
TO-220-3 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
IXYS/LITTELFUSE |
1906 |
TO-220 |
15800 |
全新原装正品现货直销 |
IXTP15P15T芯片相关品牌
IXTP15P15T规格书下载地址
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2018-12-28
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