位置：首页 > IC中文资料第8276页 > IXTN61N50
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IXTN61N50 | High Current Power MOSFET N-Channel Enhancement Mode Features • International standard package • Isolation voltage 3000V (RMS) • Low RDS(on) HDMOSTM process • Rugged polysilicon gate cell structure • Low drain-to-case capacitance ( | IXYS |   | |
High Current Power MOSFET High Current Power MOSFET N-Channel Enhancement Mode Features • International standard package • Isolation voltage 3000V (RMS) • Low RDS (on) HDMOSTM processl • Rugged polysilicon gate cell structure • Low drain-to-case capacitance ( | IXYS | |
IXTN61N50产品属性
- 类型
描述
- 型号
IXTN61N50
- 制造商
IXYS
- 制造商全称
IXYS Corporation
- 功能描述
High Current Power MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
N/A |
47000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
IXYS |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
|||
IXYS |
10+ |
主营模块 |
85 |
原装正品,公司正品供应 |
|||
IXYS |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
|||
IXYS |
23+ |
模块 |
3562 |
||||
IXYS |
23+ |
标准封装 |
5000 |
原厂授权一级代理 IGBT模块 可控硅 晶闸管 熔断器质保 |
|||
IXYS |
2015 |
模块 |
300 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
IXYS |
22+ |
SOT227 |
8000 |
原装正品支持实单 |
|||
IXYS/艾赛斯 |
23+ |
SOT-227 |
56230 |
原装正品 华强现货 |
|||
IXYS |
21+ |
SOT-227B |
1000 |
主打产品价格优惠.全新原装正品 |
IXTN61N50规格书下载地址
IXTN61N50参数引脚图相关
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IXTN61N50数据表相关新闻
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2018-12-28
DdatasheetPDF页码索引
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