N-ChannelEnhancementMode

文件：254.99 Kbytes Page：4 Pages

封装/外壳：SOT-227-4，miniBLOC 包装：管件 描述：MOSFET N-CH 500V 36A SOT227B 分立半导体产品 晶体管 - FET，MOSFET - 单个

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORINISOTOPPACKAGE

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORINISOTOPPACKAGE ■HIGHCURRENTPOWERMODULE ■AVALANCHERUGGEDTECHNOLOGY(SEEIRFP450FORRATING) ■VERYLARGESOA-LARGEPEAKPOWERCAPABILITY ■EASYTOMOUNT ■SAMECURRENTCAPABILITYFORTHETWOSOURCETERMINALS ■EXTREMELYLOWRthJUNCT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=19A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.19Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=36A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=170mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

PolarHVHiPerFETPowerMOSFET

文件：254.15 Kbytes Page：5 Pages

PolarHVHiPerFETPowerMOSFET

文件：343.73 Kbytes Page：5 Pages