N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE

■ HIGH CURRENT POWER MODULE

■ AVALANCHE RUGGED TECHNOLOGY

■ VERY LARGE SOA - LARGE PEAK POWER CAPABILITY

■ EASY TO MOUNT

■ SAME CURRENT CAPABILITY FOR THE TWO SOURCE TERMINALS

■ EXTREMELY LOW Rth JUNCTION TO CASE

■ VERY LOW DRAIN TO CASE CAPACITANCE

■ VERY LOW INTERNAL PARASITIC INDUCTANCE (TYPICALLY < 5 nH)

■ ISOLATED PACKAGE UL RECOGNIZED (FILE No E81743)

INDUSTRIAL APPLICATIONS:

■ SMPS & UPS

■ MOTOR CONTROL

■ WELDING EQUIPMENT

■ OUTPUT STAGE FOR PWM, ULTRASONIC CIRCUITS