MegaMOSFET

N-Channel Enhancement Mode Features • International standard packages • Low RDS(on) HDMOS™ process • Rugged polysilicon gate cell structure • Low package inductance (

MegaMOS FET

文件：53.34 Kbytes Page：2 Pages

isc N-Channel MOSFET Transistor

文件：311.75 Kbytes Page：2 Pages

N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM75N10 uses advanced trench technology and design to provide excellent RDS(ON) with

N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM75N10E uses advanced trench technology and design to provide excellent RDS(ON) with

N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM75N10Q uses advanced trench technology and design to provide excellent RDS(ON) with

N-Channel Power MOSFET

文件：412.76 Kbytes Page：8 Pages

Fast Switching Speed

文件：58.98 Kbytes Page：2 Pages