MegaMOSFET

N-Channel Enhancement Mode Features • International standard packages • Low RDS(on) HDMOS™ process • Rugged polysilicon gate cell structure • Low package inductance (

MegaMOS FET

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isc N-Channel MOSFET Transistor

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N通道标准高电压MOSFET

N通道线性MOSFET

isc N-Channel MOSFET Transistor

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N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated

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N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM75N10 uses advanced trench technology and design to provide excellent RDS(ON) with

N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM75N10E uses advanced trench technology and design to provide excellent RDS(ON) with

N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM75N10Q uses advanced trench technology and design to provide excellent RDS(ON) with

N-Channel Power MOSFET

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Fast Switching Speed

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