MegaMOSFET

N-Channel Enhancement Mode Features • International standard packages • Low RDS(on) HDMOS™ process • Rugged polysilicon gate cell structure • Low package inductance (

N通道标准高电压MOSFET

• 国际标准包装\n• 快速切换时间\n• 雪崩评级\n• 坚固的多晶硅栅极单元结构\n• 超低的RDS(on);

isc N-Channel MOSFET Transistor

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MegaMOS FET

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N通道线性MOSFET

• 专为线性操作设计\n• 75°C条件下FBSOA得到保证\n• 低导通电阻RDS(on)\n• 雪崩评级\n• 国际标准包装\n• 拥有UL 94 V-0易燃性认证 成型环氧树脂;

N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated

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isc N-Channel MOSFET Transistor

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HIPER FET POWER MOSFETS Q CLASS

HIPER FET POWER MOSFETS Q CLASS

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features • Ultrafast body diode • Rugged polysilicon gate cell structure • Increased Unclamped Inductive Switching (UIS) capability • Hermetically sealed, surface mount power package • Low package inductance • Very low thermal resistance • Reverse polarity available upon request

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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