MegaMOSFET

N-Channel Enhancement Mode Features International standard packages Low RDS (on)HDMOS™ process Rugged polysilicon gate cell structure Low package inductance (

N通道标准高电压MOSFET

• 国际标准包装\n• 快速切换时间\n• 雪崩评级\n• 坚固的多晶硅栅极单元结构\n• 超低的RDS(on);

N-Channel Enhancement Mode

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包装：卷带（TR） 描述：POWER MOSFET TO-3 分立半导体产品 晶体管 - FET，MOSFET - 单个

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

HiPerFET Power MOSFETs

N-Channel Enhancement Mode Avalanche Rated, Low Qg ,High dv/dt Features IXYS advanced low Qg process International standard packages Low RDS (on) Unclamped Inductive Switching (UIS) rated Fast switching Molding epoxies meet UL 94 V-0 flammability classification

HiPerFET Power MOSFETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

MegaMOSFET

N-Channel Enhancement Mode Features International standard packages Low RDS (on)HDMOS™ process Rugged polysilicon gate cell structure Low package inductance (

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

500 Volts 24 Amps 230 mΩ Features · Ultrafast body diode · Rugged polysilicon gate cell structure · Increased Unclamped Inductive Switching (UIS) capability · Hermetically sealed, surface mount power package · Low package inductance · Very low thermal resistance ·