丝印代码：FQA24N50；N-Channel QFET® MOSFET 500 V, 24 A, 200 mΩ

Features • 24 A, 500 V, RDS(on) = 200 mΩ (Max.) @ VGS = 10 V, ID = 12 A • Low Gate Charge (Typ. 90 nC) • Low Crss (Typ. 55 pF) • 100% Avalanche Tested • RoHS compliant Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietar

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=24A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

功率 MOSFET，N 沟道，QFET®，500 V，24 A，200 mΩ，TO-3P

此类 N 沟道增强型电场效应晶体管是使用 Fairchild 的平面条纹和 DMOS 专属技术生产的。此先进技术特别适用于最大程度降低导通电阻，提供卓越的开关性能，可承受雪崩和换相模式下的高能量脉冲。此类器件非常适用于高效开关模式电源、功率系数校正、基于半桥的电子灯镇流器。 •24 A、500 V、RDS(on) = 200 mΩ（最大值）（VGS = 10 V、ID = 12 A）\n•低栅极电荷（典型值 90 nC)\n•低 Crss（典型值 55 pF)\n•100% 经过雪崩击穿测试\n•符合 RoHS 标准;

isc N-Channel MOSFET Transistor

• FEATURES • With TO-3PN packaging • High speed switching • Very high commutation ruggedness • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operationz • APPLICATIONS • Switching applications

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w

HiPerFET Power MOSFETs

N-Channel Enhancement Mode Avalanche Rated, Low Qg ,High dv/dt Features IXYS advanced low Qg process International standard packages Low RDS (on) Unclamped Inductive Switching (UIS) rated Fast switching Molding epoxies meet UL 94 V-0 flammability classification

HiPerFET Power MOSFETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

MegaMOSFET

N-Channel Enhancement Mode Features International standard packages Low RDS (on)HDMOS™ process Rugged polysilicon gate cell structure Low package inductance (

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

500 Volts 24 Amps 230 mΩ Features · Ultrafast body diode · Rugged polysilicon gate cell structure · Increased Unclamped Inductive Switching (UIS) capability · Hermetically sealed, surface mount power package · Low package inductance · Very low thermal resistance ·