MegaMOS FET

N-Channel Enhancement Mode Features ● International standard packages ● Low RDS(on) HDMOS™ process ● Rugged polysilicon gate cell structure ● Low package inductance (

MegaMOS™FET

N-Channel Enhancement Mode ● International standard packages\n● Low RDS(on) HDMOS™ process\n● Rugged polysilicon gate cell structure\n● Low package inductance (< 5 nH)\n   - easy to drive and to protect\n● Fast switching timesApplications\n● Switch-mode and resonant-mode power supplies\n● Motor controls\n● Uninterruptible Pow;

HiPerFET Power MOSFETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

HiPerFET Power MOSFETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM

TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate The D3PAK package has the capability of housing the largest chip size of any standard, plastic, surface mount power semiconductor. This allows it to be used in applications that require surfa

TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM

TMOS E−FET Power Field Effect Transistor TO-247 with Isolated Mounting Hole N−Channel Enhancement−Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMO

TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM

TMOS E-FET Power Eield Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand hi