HiPerFET Power MOSFETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

HIPERFET Power MOSFTETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

10A, 1000V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 10N100-FL is a high voltage power MOSFET combines advanced trench MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high sp

It has ferrite and 100 Ag as internal conductors, the CIL Series has excellent Q characteristics and eliminate crosstalk.

文件：67.43 Kbytes Page：7 Pages

It has ferrite and 100 Ag as internal conductors, the CIL Series has excellent Q characteristics and eliminate crosstalk.

文件：67.43 Kbytes Page：7 Pages

It has ferrite and 100 Ag as internal conductors, the CIL Series has excellent Q characteristics and eliminate crosstalk.

文件：67.43 Kbytes Page：7 Pages

It has ferrite and 100 Ag as internal conductors, the CIL Series has excellent Q characteristics and eliminate crosstalk.

文件：67.43 Kbytes Page：7 Pages