位置：首页 > IC中文资料 > IXTK80N15P
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-220 & TO-263 & TO-220F full-pak for through hole. | CET 华瑞 |   | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 & TO-220F full-pak for through hole. RoHS compliant. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 & TO-220F full-pak for through hole. RoHS compliant. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-220 & TO-263 & TO-220F full-pak for through hole. | CET 华瑞 | | ||
N-Channel MOSFET uses advanced trench technology 文件：1.86036 Mbytes Page：7 Pages | DOINGTER 杜因特 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CET |
24+ |
5000 |
|||||
CET |
20+ |
TO-220F |
67500 |
原装优势主营型号-可开原型号增税票 |
|||
CET |
17+ |
TO-220F |
3000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
CET/華瑞 |
2022+ |
TO-220F |
50000 |
原厂代理 终端免费提供样品 |
|||
TI |
24+ |
SOP-16 |
8898 |
公司现货库存,支持实单 |
|||
CET |
专业铁帽 |
TO-220F |
50 |
原装铁帽专营,代理渠道量大可订货 |
|||
CET/華瑞 |
24+ |
TO-220F |
60000 |
||||
23+ |
TO220 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
CET |
23+ |
TO-220F |
7300 |
专注配单,只做原装进口现货 |
|||
CET/華瑞 |
23+ |
TO-220F |
50000 |
全新原装正品现货,支持订货 |
IXTK80N15P规格书下载地址
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2018-12-28
DdatasheetPDF页码索引
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