High Current MegaMOSFET

High Current MegaMOS™ FET N-Channel Enhancement Mode Features • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • International standard package • Fast switching times Applications • Motor controls • DC choppers • Uninterruptable Power Supplies (UPS) • Switch-mode

N通道标准高电压MOSFET

isc N-Channel MOSFET Transistor

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isc N-Channel MOSFET Transistor

文件：296.36 Kbytes Page：2 Pages

isc N-Channel MOSFET Transistor

文件：296.36 Kbytes Page：2 Pages

isc N-Channel MOSFET Transistor

文件：295.28 Kbytes Page：2 Pages

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 33A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.16Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

HiPerFET Power MOSFETs

HiPerFET Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • International standard packages • Molding epoxies meet UL 94 V-0 flammability classification • Low RDS (on) HDMOSTM process • Unclamped Inductive Switching (UIS) rated • Fast intrinsic rectifi

Power MOSFETs

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