位置：首页 > IC中文资料第7024页 > IXTK170N10P
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IXTK170N10P | N-Channel Enhancement Mode Avalanche Rated 文件：170.28 Kbytes Page：5 Pages | IXYS 艾赛斯 |   | |
IXTK170N10P | isc N-Channel MOSFET Transistor 文件：310.87 Kbytes Page：2 Pages | ISC 无锡固电 | | |
IXTK170N10P | N通道标准MOSFET | Littelfuse 力特 | | |
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. | CET-MOS 华瑞 | | ||
100V N-Channel Power Mosfet 文件：3.11699 Mbytes Page：4 Pages | FOSTER 福斯特半导体 | | ||
N-Channel Power MOSFET 文件：2.24483 Mbytes Page：4 Pages | FOSTER 福斯特半导体 | |
IXTK170N10P产品属性
- 类型
描述
- 型号
IXTK170N10P
- 功能描述
MOSFET 170 Amps 100V 0.009 Ohm Rds
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Littelfuse/IXYS |
24+ |
TO264 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
IXYS |
23+ |
NA |
88 |
专做原装正品,假一罚百! |
|||
IXYS |
25+ |
235 |
公司优势库存 热卖中! |
||||
IXYS |
25+ |
管3PL |
18000 |
原厂直接发货进口原装 |
|||
ISC |
24+ |
TO-264 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
IXYS |
23+ |
TO-3PL |
5000 |
原装正品,假一罚十 |
|||
IXYS |
24+ |
TO-264 |
8866 |
||||
IXYS |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
ISC |
202030 |
TO-264 |
285 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ISC |
23+ |
TO-264 |
50000 |
全新原装正品现货,支持订货 |
IXTK170N10P规格书下载地址
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2018-12-28
DdatasheetPDF页码索引
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