PolarHT Power MOSFET

PolarHT™ Power MOSFET N-Channel Enhancement Mode Features • International standard packages • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savings • High power density

Isc N-Channel MOSFET Transistor

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N通道标准MOSFET

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 102A@ TC=25℃ ·Drain Source Voltage- : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 33mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

PolarHT HiPerFET Power MOSFET

PolarHT™ HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Features • International standard package • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savings •

PolarHV HiPerFET Power MOSFET

PolarHV™ HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International standard package • Encapsulating epoxy meets UL 94 V-0, flammability classification • miniBLOC with Aluminium nitride isolation • Fast recovery diode • Unclamped Inducti

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 60A@ TC=25℃ ·Drain Source Voltage -VDSS= 300V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 36mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

PolarHT HiPerFET Power MOSFET

PolarHT™ HiPerFET Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Features • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Intern