封装/外壳：TO-247-3 包装：卷带（TR） 描述：MOSFET N-CH 200V 86A TO247 分立半导体产品 晶体管 - FET，MOSFET - 单个

Trench Gate Power MOSFET N-Channel Enhancement Mode Avalanche Rated

Trench Gate Power MOSFET N-Channel Enhancement Mode Avalanche Rated Features • International standard packages • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savings • High power density

isc N-Channel MOSFET Transistor

• FEATURES • Static drain-source on-resistance: RDS(on) ≤ 29mΩ@VGS=10V • Fully characterized avalanche voltage and current • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation ​​​​​​​ • APPLICATION • DC/DC Converters • High Spe

Trench Gate Power MOSFET N-Channel Enhancement Mode Avalanche Rated

Trench Gate Power MOSFET N-Channel Enhancement Mode Avalanche Rated Features • International standard packages • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savings • High power density

Trench Gate Power MOSFET N-Channel Enhancement Mode Avalanche Rated

Trench Gate Power MOSFET N-Channel Enhancement Mode Avalanche Rated Features • International standard packages • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savings • High power density

isc N-Channel MOSFET Transistor

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