10 AMP, 600V, 0.55-ohm / 0.7-ohm

10 AMP, 600 V, 0.55Ω/0.7Ω

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.7Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

10 AMP, 600V, 0.55-ohm / 0.7-ohm

10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching a

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10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

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