N通道标准 Polar™ MOSFET

• 国际标准包装 \n• 动态dv/dt评级\n• 较低的RDS(ON)和Qg\n• 雪崩评级\n• 较低的封装电感;

PolarHV Power MOSFET - N-Channel Enhancement Mode

文件：102.63 Kbytes Page：5 Pages

N-Channel Enhancement Mode Avalanche Rated

文件：130.03 Kbytes Page：5 Pages

丝印代码：D2PAK；isc N-Channel MOSFET Transistor

文件：299.4 Kbytes Page：2 Pages

500V N-Channel MOSFET

500V N-Channel MOSFET

500V N-Channel MOSFET

Features • 4.5A, 500V, RDS(on) = 1.8Ω @VGS = 10 V • Low gate charge ( typical 13 nC) • Low Crss ( typical 8.5 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

500V N-Channel MOSFET

500V N-Channel MOSFET

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w

PowerMOS transistor Isolated version of PHP8N50E

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Pow