500V N-Channel MOSFET

500V N-Channel MOSFET

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=3.5A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.8Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=4.0A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.4Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w

N-Channel QFET® MOSFET 500 V, 4.0 A, 1.4 Ω

Features • 4.0 A, 500 V, RDS(on) = 1.4 Ω @VGS = 10 V • Low Gate Charge (Typ. 18 nC) • Low Crss (Typ. 15 pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary

分立式 MOSFET

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isc N-Channel MOSFET Transistor

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