500V N-Channel MOSFET

500V N-Channel MOSFET

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=3.5A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.8Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

丝印代码：FQU5N50CS；N-Channel QFET® MOSFET 500 V, 4.0 A, 1.4 Ω

Features • 4.0 A, 500 V, RDS(on) = 1.4 Ω @VGS = 10 V • Low Gate Charge (Typ. 18 nC) • Low Crss (Typ. 15 pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=4.0A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.4Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w

分立式 MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy • 4.0 A, 500 VrDS(ON) = 1.4 Ω @ VGS = 10 V\n• Low Gate Charge (Typ. 18 nC)\n• Low Crss (Typ. 15 pF)\n• Fast Switching Speed\n• 100% AvalancheTested\n• Improved dv/dt Capability;

500V N-Channel MOSFET

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MOSFET N-CH 500V 3.5A IPAK

500V N-Channel MOSFET

500V N-Channel MOSFET

500V N-Channel MOSFET

Features • 4.5A, 500V, RDS(on) = 1.8Ω @VGS = 10 V • Low gate charge ( typical 13 nC) • Low Crss ( typical 8.5 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

PowerMOS transistor Isolated version of PHP8N50E

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Pow