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IXTA2N80P价格

参考价格:¥3.5509

型号:IXTA2N80P 品牌:Ixys 备注:这里有IXTA2N80P多少钱,2026年最近7天走势,今日出价,今日竞价,IXTA2N80P批发/采购报价,IXTA2N80P行情走势销售排行榜,IXTA2N80P报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IXTA2N80P

isc N-Channel MOSFET Transistor

文件:300.11 Kbytes Page:2 Pages

ISC

无锡固电

IXTA2N80P

PolarHV Power MOSFET

文件:162.65 Kbytes Page:5 Pages

IXYS

艾赛斯

IXTA2N80P

N-Channel: Standard Power MOSFETs

LITTELFUSE

力特

800V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

FAIRCHILD

仙童半导体

800V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high a

FAIRCHILD

仙童半导体

800V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are product using Fairchilds proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

FAIRCHILD

仙童半导体

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 5 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INPUT CAPACITANCE ■ LOW GATE CHARGE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWI

STMICROELECTRONICS

意法半导体

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 5 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INPUT CAPACITANCE ■ LOW GATE CHARGE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWI

STMICROELECTRONICS

意法半导体

IXTA2N80P产品属性

  • 类型

    描述

  • 型号

    IXTA2N80P

  • 功能描述

    MOSFET 2 Amps 800V 6 Rds

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-3-17 19:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IXYS
22+
TO2633 D2Pak (2 Leads + Tab) T
9000
原厂渠道,现货配单
IXYS
19+
TO-263
336
一级代理,专注军工、汽车、医疗、工业、新能源、电力
IXYS(艾赛斯)
25+
N/A
7500
IXYS(艾赛斯)全系列在售
IXYS
19+
TO-263
114
全新 发货1-2天
原装正品
23+
TO-263-3
70837
##公司主营品牌长期供应100%原装现货可含税提供技术
IXYS/艾赛斯
23+
TO-263
456444
原厂授权一级代理,专业海外优势订货,价格优势、品种
IXYS
24+
TO-263
8866
IXYS
23+
TO-263
8000
只做原装现货
IXYS
23+
TO-263
7000
IXYS
原厂封装
9800
原装进口公司现货假一赔百

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