位置:首页 > IC中文资料第209页 > FQB2N80

型号 功能描述 生产厂家 企业 LOGO 操作
FQB2N80

800V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

FAIRCHILD

仙童半导体

FQB2N80

800V N-Channel MOSFET

ONSEMI

安森美半导体

800V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high a

FAIRCHILD

仙童半导体

800V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are product using Fairchilds proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

FAIRCHILD

仙童半导体

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 5 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INPUT CAPACITANCE ■ LOW GATE CHARGE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWI

STMICROELECTRONICS

意法半导体

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 5 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INPUT CAPACITANCE ■ LOW GATE CHARGE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWI

STMICROELECTRONICS

意法半导体

FQB2N80产品属性

  • 类型

    描述

  • 型号

    FQB2N80

  • 功能描述

    MOSFET 800V N-Channel QFET

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-5-16 9:23:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON
23+
TO-263
295
正规渠道,只有原装!
仙童
05+
TO-263
3800
原装进口
FAIRCHILD
25+
SOT-263
32500
普通
FAIRCHILD/仙童
23+
D2-PAKTO-263
24190
原装正品代理渠道价格优势
FAIRCHILD/仙童
21+
D2-PAKTO-263
30000
优势供应 实单必成 可13点增值税
FAIRCHILD/仙童
25+
D2-PAKTO-263
20000
原装
FAIRCHILD/仙童
26+
TO263
43600
全新原装现货,假一赔十
onsemi
25+
D2PAK(TO-263)
18746
样件支持,可原厂排单订货!
ON
2023+
TO-263
8800
正品渠道现货 终端可提供BOM表配单。
onsemi
25+
D2PAK(TO-263)
18798
正规渠道,免费送样。支持账期,BOM一站式配齐

FQB2N80数据表相关新闻