800V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are product using Fairchilds proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=1.5A@ TC=25℃ ·Drain Source Voltage -VDSS=800V(Min) ·Static Drain-Source On-Resistance -RDS(on) =6.3Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

2.0A, 800V NHANNEL POWER MOSFET

 DESCRIPTION The UTC 2N80-C provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 5.6 Ω @ VGS=10V, ID=1.0A * Low Reverse Transfer Capacitance * Fast Switching Capab

2 Amps, 800 Volts N-CHANNEL POWER MOSFET

文件：170.28 Kbytes Page：6 Pages

Drain Current ID= 2.4A@ TC=25C

文件：68.07 Kbytes Page：2 Pages

2A, 800V N-CHANNEL POWER MOSFET

文件：235.68 Kbytes Page：6 Pages

N-CHANNEL POWER MOSFET

文件：263.34 Kbytes Page：7 Pages