Low VCE(sat) IGBT, High Speed IGBT

Low VCE(sat) IGBT High Speed IGBT Short Circuit SOA Capability Features • International standard packages • Guaranteed Short Circuit SOA capability • Low VCE(sat) - for low on-state conduction losses • High current handling capability • MOS Gate turn-on - drive simplicity • Fast

Low VCE(sat) IGBT, High Speed IGBT

Low VCE(sat) IGBT High Speed IGBT Short Circuit SOA Capability Features • International standard packages • Guaranteed Short Circuit SOA capability • Low VCE(sat) - for low on-state conduction losses • High current handling capability • MOS Gate turn-on - drive simplicity • Fast

BIDW30N60T Insulated Gate Bipolar Transistor (IGBT)

General Information The Bourns® Model BIDW30N60T IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteris

Low Loss DuoPack: IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled diode

文件：1.9827 Mbytes Page：16 Pages

ACTIVE / SYNCHRONOUS RECTIFIER

文件：672.35 Kbytes Page：15 Pages

N-Channel Enhancement Mode MOSFET

文件：281.61 Kbytes Page：4 Pages

N-Channel Enhancement Mode MOSFET

文件：264.01 Kbytes Page：4 Pages