Low VCE(sat) IGBT, High Speed IGBT

Low VCE(sat) IGBT High Speed IGBT Short Circuit SOA Capability Features • International standard packages • Guaranteed Short Circuit SOA capability • Low VCE(sat) - for low on-state conduction losses • High current handling capability • MOS Gate turn-on - drive simplicity • Fast

Low VCE(sat) IGBT with Diode High Speed IGBT with Diode Combi Packs Short Circuit SOA Capability

Low VCE(sat) IGBT with Diode High Speed IGBT with Diode Combi Packs Short Circuit SOA Capability Features • International standard package JEDEC TO-247 AD • High frequency IGBT with guaranteed Short Circuit SOA capability • IGBT and anti-parallel FRED in one package • 2nd generation HDMOSTM

封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 50A 200W TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Low VCE(sat) IGBT with Diode High Speed IGBT with Diode Combi Packs Short Circuit SOA Capability

BIDW30N60T Insulated Gate Bipolar Transistor (IGBT)

General Information The Bourns® Model BIDW30N60T IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteris

Low Loss DuoPack: IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled diode

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ACTIVE / SYNCHRONOUS RECTIFIER

文件：672.35 Kbytes Page：15 Pages

N-Channel Enhancement Mode MOSFET

文件：281.61 Kbytes Page：4 Pages

N-Channel Enhancement Mode MOSFET

文件：264.01 Kbytes Page：4 Pages