HiPerFAST IGBT Lightspeed Series

Features • International standard packages JEDEC TO-247 and surface mountable TO-268 • High frequency IGBT • High current handling capability • Latest generation HDMOSTM process • MOS Gate turn-on - drive simplicity Applications • PFC circuits • Uninterruptible powe

封装/外壳：TO-268-3，D³Pak（2 引线 + 接片），TO-268AA 包装：管件 描述：IGBT 600V 48A 150W TO268 分立半导体产品 晶体管 - UGBT、MOSFET - 单

HiPerFAST IGBT with Diode Lightspeed Series

Features • International standard packages JEDEC TO-247 and surface mountable TO-268 • High frequency IGBT • High current handling capability • Latest generation HDMOSTM process • MOS Gate turn-on - drive simplicity • Fast recovery expitaxial Diode (FRED) - soft recovery with low IRM

封装/外壳：TO-268-3，D³Pak（2 引线 + 接片），TO-268AA 包装：管件 描述：IGBT 600V 48A 150W TO268 分立半导体产品 晶体管 - UGBT、MOSFET - 单

24A, 600V DP MOS POWER TRANSISTOR

GENERAL DESCRIPTION SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power densit

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=23.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.24Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

N-Channel Enhancement Mode MOSFET

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N-Channel Power MOSFET

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