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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IXGM17N100A | LowVCE(sat)IGBT,HighspeedIGBT Features ●Internationalstandardpackages ●2ndgenerationHDMOSTMprocess ●LowVCE(sat) -forlowon-stateconductionlosses ●Highcurrenthandlingcapability ●MOSGateturn-on -drivesimplicity ●Voltageratingguaranteedathigh temperature(125°C) Applications ●AC | IXYS IXYS Integrated Circuits Division |  |   |
IXGM17N100A | LowVIGBTHighspeedIGBT Features ●Internationalstandardpackages ●2ndgenerationHDMOSTMprocess ●LowVCE(sat) -forlowon-stateconductionlosses ●Highcurrenthandlingcapability ●MOSGateturn-on -drivesimplicity ●Voltageratingguaranteedathigh temperature(125°C) Applications ●AC | IXYS IXYS Integrated Circuits Division | | |
IXGM17N100A | 封装/外壳：TO-204AE 包装：管件 描述：POWER MOSFET TO-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | IXYS IXYS Integrated Circuits Division | | |
LowVCE(sat)IGBT,HighspeedIGBT Features ●Internationalstandardpackages ●2ndgenerationHDMOSTMprocess ●LowVCE(sat) -forlowon-stateconductionlosses ●Highcurrenthandlingcapability ●MOSGateturn-on -drivesimplicity ●Voltageratingguaranteedathigh temperature(125°C) Applications ●AC | IXYS IXYS Integrated Circuits Division | | | |
LowVCE(sat)IGBT,HighspeedIGBT Features ●Internationalstandardpackages ●2ndgenerationHDMOSTMprocess ●LowVCE(sat) -forlowon-stateconductionlosses ●Highcurrenthandlingcapability ●MOSGateturn-on -drivesimplicity ●Voltageratingguaranteedathigh temperature(125°C) Applications ●AC | IXYS IXYS Integrated Circuits Division | | | |
LowVIGBTHighspeedIGBT Features ●Internationalstandardpackages ●2ndgenerationHDMOSTMprocess ●LowVCE(sat) -forlowon-stateconductionlosses ●Highcurrenthandlingcapability ●MOSGateturn-on -drivesimplicity ●Voltageratingguaranteedathigh temperature(125°C) Applications ●AC | IXYS IXYS Integrated Circuits Division | | | |
LowVIGBTHighspeedIGBT Features ●Internationalstandardpackages ●2ndgenerationHDMOSTMprocess ●LowVCE(sat) -forlowon-stateconductionlosses ●Highcurrenthandlingcapability ●MOSGateturn-on -drivesimplicity ●Voltageratingguaranteedathigh temperature(125°C) Applications ●AC | IXYS IXYS Integrated Circuits Division | | | |
LowVCE(sat)IGBT,HighspeedIGBT Features ●Internationalstandardpackages ●2ndgenerationHDMOSTMprocess ●LowVCE(sat) -forlowon-stateconductionlosses ●Highcurrenthandlingcapability ●MOSGateturn-on -drivesimplicity ●Voltageratingguaranteedathigh temperature(125°C) Applications ●AC | IXYS IXYS Integrated Circuits Division | | |
IXGM17N100A产品属性
- 类型
描述
- 型号
IXGM17N100A
- 制造商
IXYS
- 制造商全称
IXYS Corporation
- 功能描述
Low VCE(sat) IGBT, High speed IGBT
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS/艾赛斯 |
23+ |
NA/ |
30 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
IXYS |
2020+ |
TO-3 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
IXYS |
9352+ |
TO-3 |
30 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IXYS |
2016+ |
TO-3 |
6526 |
只做原装正品!假一赔十!只要有上一定有货的! |
|||
IXYS/艾赛斯 |
专业铁帽 |
TO-3 |
67500 |
铁帽原装主营-可开原型号增税票 |
|||
IXYS/艾赛斯 |
2022 |
TO-3 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
|||
IXYS/艾赛斯 |
21+ |
TO-3 |
10000 |
原装现货假一罚十 |
|||
IXYS |
9352+ |
TO-3 |
35 |
普通 |
|||
IXYS |
21+ |
97 |
35210 |
一级代理/放心采购 |
|||
IXYS/艾赛斯 |
2102+ |
TO-3 |
6854 |
只做原厂原装正品假一赔十! |
IXGM17N100A芯片相关品牌
IXGM17N100A规格书下载地址
IXGM17N100A参数引脚图相关
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IXGM17N100A数据表相关新闻
IXFT60N60X3HV
IXFT60N60X3HV
2022-8-11IXFP22N65X2M
原装正品现货
2022-7-19IXGH60N60C3D1
IXGH60N60C3D1，全新原装当天发货或门市自取0755-82732291.
2019-12-2IXOLAR?高效25％SolarMD模块SM111K04L
IXYS/Littelfuse的SolarMD模块非常适合为许多类型的电池供电或绿色电力产品充电
2019-9-17IXOLAR?高效25％SolarBIT太阳能电池KXOB25-12X1F
IXYS/Littelfuse的SolarBIT非常适合为许多类型的电池供电的电网产品充电
2019-9-17IXPD610-工业控制IC
IXDP610数字脉宽调制器（DPWM）是一个可编程CMOSLSI器件接收数字从一个微处理器的脉冲宽度数据并生成两个相辅相成的，非重叠，脉冲宽度调制直接数字控制信号开关电源的桥梁。DPWM是根据操作直接控制的微处理器和与大多数标准的接口，轻松微处理器和微型计算机巴士。IXDP610封装在18引脚超薄的DP。所产生的PWM波形IXDP610从比较的结果输出的脉冲宽度计数器在脉冲宽度存储的电话号码锁存（见下文）。一个可编程“死时间”已被纳入PWM波形。死区时间逻辑禁用在每两个输出比较器输出的过渡所需的死区时间间隔。输出级提供互补PWM输出信号的能力下沉和采购20毫安的TTL电压水平。输出禁用
2012-11-29
DdatasheetPDF页码索引
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