位置：首页 > IC中文资料第8196页 > IXGH17N100A
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IXGH17N100A | Low V IGBT High speed IGBT Features ● International standard packages ● 2nd generation HDMOSTM process ● Low VCE(sat) - for low on-state conduction losses ● High current handling capability ● MOS Gate turn-on - drive simplicity ● Voltage rating guaranteed at high temperature (125°C) Applications ● AC | IXYS 艾赛斯 |   | |
IXGH17N100A | Low VCE(sat) IGBT, High speed IGBT Features ● International standard packages ● 2nd generation HDMOSTM process ● Low VCE(sat) - for low on-state conduction losses ● High current handling capability ● MOS Gate turn-on - drive simplicity ● Voltage rating guaranteed at high temperature (125°C) Applications ● AC | IXYS 艾赛斯 | | |
IXGH17N100A | 封装/外壳：TO-247-3 包装：管件 描述：IGBT 1000V 34A 150W TO247AD 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | IXYS 艾赛斯 | | |
IXGH17N100A | PT IGBTs | Littelfuse 力特 | | |
Low VCE(sat) IGBT, High speed IGBT Features ● International standard packages ● 2nd generation HDMOSTM process ● Low VCE(sat) - for low on-state conduction losses ● High current handling capability ● MOS Gate turn-on - drive simplicity ● Voltage rating guaranteed at high temperature (125°C) Applications ● AC | IXYS 艾赛斯 | | ||
Low V IGBT High speed IGBT Features ● International standard packages ● 2nd generation HDMOSTM process ● Low VCE(sat) - for low on-state conduction losses ● High current handling capability ● MOS Gate turn-on - drive simplicity ● Voltage rating guaranteed at high temperature (125°C) Applications ● AC | IXYS 艾赛斯 | | ||
Low VCE(sat) IGBT with Diode High speed IGBT with Diode Features • International standard package JEDEC TO-247 AD • IGBT and anti-parallel FRED in one package • 2nd generation HDMOSTM process • Low VCE(sat) - for minimum on-state conduction losses • MOS Gate turn-on - drive simplicity • Fast Recovery Epitaxial Diode (FRED) | IXYS 艾赛斯 | | ||
封装/外壳：TO-247-3 包装：卷带（TR） 描述：IGBT 1000V 34A 150W TO247AD 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | IXYS 艾赛斯 | | ||
PT IGBTs | Littelfuse 力特 | | ||
Low VCE(sat) IGBT, High speed IGBT Features ● International standard packages ● 2nd generation HDMOSTM process ● Low VCE(sat) - for low on-state conduction losses ● High current handling capability ● MOS Gate turn-on - drive simplicity ● Voltage rating guaranteed at high temperature (125°C) Applications ● AC | IXYS 艾赛斯 | |
IXGH17N100A产品属性
- 类型
描述
- 型号
IXGH17N100A
- 功能描述
IGBT 晶体管 17 Amps 1000V
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS/艾赛斯 |
24+ |
NA/ |
5425 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
IXYS |
25+ |
1 |
公司优势库存 热卖中!! |
||||
IXYS |
24+ |
TO-247AD |
51 |
||||
IXYS |
23+ |
TO-247 |
7000 |
||||
IXYS |
20+ |
TO-247 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
IXYS |
23+ |
TO-3P |
67814 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
IXYS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
IXYS |
10+ |
TO-3P |
100 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IXYS/艾赛斯 |
23+ |
TO-3P |
45000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
IXYS/艾赛斯 |
23+ |
TO-247 |
50000 |
全新原装正品现货,支持订货 |
IXGH17N100A规格书下载地址
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IXGH17N100A数据表相关新闻
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进口代理
2022-12-7IXFT60N60X3HV
IXFT60N60X3HV
2022-8-11IXFP22N65X2M
原装正品现货
2022-7-19IXGH60N60C3D1
IXGH60N60C3D1，全新原装当天发货或门市自取0755-82732291.
2019-12-2IXOLAR?高效25％SolarMD模块SM111K04L
IXYS / Littelfuse的SolarMD模块非常适合为许多类型的电池供电或绿色电力产品充电
2019-9-17IXOLAR?高效25％SolarBIT太阳能电池KXOB25-12X1F
IXYS / Littelfuse的SolarBIT非常适合为许多类型的电池供电的电网产品充电
2019-9-17
DdatasheetPDF页码索引
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