位置：首页 > IC中文资料第8196页 > IXGH17N100A
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IXGH17N100A | LowVIGBTHighspeedIGBT Features ●Internationalstandardpackages ●2ndgenerationHDMOSTMprocess ●LowVCE(sat) -forlowon-stateconductionlosses ●Highcurrenthandlingcapability ●MOSGateturn-on -drivesimplicity ●Voltageratingguaranteedathigh temperature(125°C) Applications ●AC | IXYS IXYS Corporation |  |   |
IXGH17N100A | LowVCE(sat)IGBT,HighspeedIGBT Features ●Internationalstandardpackages ●2ndgenerationHDMOSTMprocess ●LowVCE(sat) -forlowon-stateconductionlosses ●Highcurrenthandlingcapability ●MOSGateturn-on -drivesimplicity ●Voltageratingguaranteedathigh temperature(125°C) Applications ●AC | IXYS IXYS Corporation | | |
IXGH17N100A | 封装/外壳：TO-247-3 包装：管件 描述：IGBT 1000V 34A 150W TO247AD 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | IXYS IXYS Corporation | | |
LowVCE(sat)IGBT,HighspeedIGBT Features ●Internationalstandardpackages ●2ndgenerationHDMOSTMprocess ●LowVCE(sat) -forlowon-stateconductionlosses ●Highcurrenthandlingcapability ●MOSGateturn-on -drivesimplicity ●Voltageratingguaranteedathigh temperature(125°C) Applications ●AC | IXYS IXYS Corporation | | | |
LowVIGBTHighspeedIGBT Features ●Internationalstandardpackages ●2ndgenerationHDMOSTMprocess ●LowVCE(sat) -forlowon-stateconductionlosses ●Highcurrenthandlingcapability ●MOSGateturn-on -drivesimplicity ●Voltageratingguaranteedathigh temperature(125°C) Applications ●AC | IXYS IXYS Corporation | | | |
LowVCE(sat)IGBTwithDiodeHighspeedIGBTwithDiode Features •Internationalstandardpackage JEDECTO-247AD •IGBTandanti-parallelFREDinone package •2ndgenerationHDMOSTMprocess •LowVCE(sat) -forminimumon-stateconduction losses •MOSGateturn-on -drivesimplicity •FastRecoveryEpitaxialDiode(FRED) | IXYS IXYS Corporation | | | |
封装/外壳：TO-247-3 包装：卷带（TR） 描述：IGBT 1000V 34A 150W TO247AD 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | IXYS IXYS Corporation | | | |
LowVCE(sat)IGBT,HighspeedIGBT Features ●Internationalstandardpackages ●2ndgenerationHDMOSTMprocess ●LowVCE(sat) -forlowon-stateconductionlosses ●Highcurrenthandlingcapability ●MOSGateturn-on -drivesimplicity ●Voltageratingguaranteedathigh temperature(125°C) Applications ●AC | IXYS IXYS Corporation | | |
IXGH17N100A产品属性
- 类型
描述
- 型号
IXGH17N100A
- 功能描述
IGBT 晶体管 17 Amps 1000V
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS/艾赛斯 |
24+ |
NA/ |
5425 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
IXYS |
10+ |
TO-3P |
100 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IXYS |
23+ |
TO-3P |
67814 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
IXYS |
2016+ |
TO-247 |
6528 |
房间原装进口现货假一赔十 |
|||
IXYS |
89 |
1 |
公司优势库存 热卖中!! |
||||
IXYS |
24+ |
TO-247AD |
51 |
||||
IXYS |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
|||
IXYS |
22+ |
TO247AD (IXGH) |
9000 |
原厂渠道,现货配单 |
|||
IXYS/艾赛斯 |
22+ |
TO-247 |
25000 |
只做原装进口现货,专注配单 |
|||
IXYS |
23+ |
TO-247 |
8000 |
只做原装现货 |
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IXGH17N100A规格书下载地址
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IXGH17N100A数据表相关新闻
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进口代理
2022-12-7IXFT60N60X3HV
IXFT60N60X3HV
2022-8-11IXFP22N65X2M
原装正品现货
2022-7-19IXGH60N60C3D1
IXGH60N60C3D1，全新原装当天发货或门市自取0755-82732291.
2019-12-2IXOLAR?高效25％SolarMD模块SM111K04L
IXYS/Littelfuse的SolarMD模块非常适合为许多类型的电池供电或绿色电力产品充电
2019-9-17IXOLAR?高效25％SolarBIT太阳能电池KXOB25-12X1F
IXYS/Littelfuse的SolarBIT非常适合为许多类型的电池供电的电网产品充电
2019-9-17
DdatasheetPDF页码索引
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