Low V IGBT High speed IGBT

Features ● International standard packages ● 2nd generation HDMOSTM process ● Low VCE(sat) - for low on-state conduction losses ● High current handling capability ● MOS Gate turn-on - drive simplicity ● Voltage rating guaranteed at high temperature (125°C) Applications ● AC

Low VCE(sat) IGBT, High speed IGBT

Features ● International standard packages ● 2nd generation HDMOSTM process ● Low VCE(sat) - for low on-state conduction losses ● High current handling capability ● MOS Gate turn-on - drive simplicity ● Voltage rating guaranteed at high temperature (125°C) Applications ● AC

封装/外壳：TO-247-3 包装：管件 描述：IGBT 1000V 34A 150W TO247AD 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Low VCE(sat) IGBT, High speed IGBT

Features ● International standard packages ● 2nd generation HDMOSTM process ● Low VCE(sat) - for low on-state conduction losses ● High current handling capability ● MOS Gate turn-on - drive simplicity ● Voltage rating guaranteed at high temperature (125°C) Applications ● AC

Low V IGBT High speed IGBT

Features ● International standard packages ● 2nd generation HDMOSTM process ● Low VCE(sat) - for low on-state conduction losses ● High current handling capability ● MOS Gate turn-on - drive simplicity ● Voltage rating guaranteed at high temperature (125°C) Applications ● AC

Low VCE(sat) IGBT with Diode High speed IGBT with Diode

Features • International standard package JEDEC TO-247 AD • IGBT and anti-parallel FRED in one package • 2nd generation HDMOSTM process • Low VCE(sat) - for minimum on-state conduction losses • MOS Gate turn-on - drive simplicity • Fast Recovery Epitaxial Diode (FRED)

封装/外壳：TO-247-3 包装：卷带（TR） 描述：IGBT 1000V 34A 150W TO247AD 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Low VCE(sat) IGBT, High speed IGBT

Features ● International standard packages ● 2nd generation HDMOSTM process ● Low VCE(sat) - for low on-state conduction losses ● High current handling capability ● MOS Gate turn-on - drive simplicity ● Voltage rating guaranteed at high temperature (125°C) Applications ● AC